Technology and Physics of Infrared and Point Contact Diodes
Semi-annual technical rept. no. 1
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF PHYSICS
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Background work for this contract performed by this laboratory has shown that the tunneling characteristics of junctions formed by a very thin dielectric layer surrounded by two metals is independent of frequency from DC through 10 micrometer wavelength. These junctions may be formed by a point contact on a lightly oxidized metal surface or by metal evaporation on such an oxidized metal surface. Work done this period involved principally relatively large evaporated structures with measurements in the microwave and far infrared regions where the circuit parameters do not mask the junction characteristics. Calculations have been performed which qualitatively resemble junction, antenna and associated parasitic parameters. A preliminary survey of far infrared incoherent sources has been conducted and such a source is being procured. The microelectronics group at Lincoln Laboratory has worked on optimizing several fabrication procedures of the printed structures. Three new structures have been designed.
- Electrooptical and Optoelectronic Devices
- Solid State Physics