Accession Number:

ADA011611

Title:

An Atlas of Laue Patterns for SiC Polytypes.

Descriptive Note:

Interim rept.,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MASS

Personal Author(s):

Report Date:

1973-01-01

Pagination or Media Count:

11.0

Abstract:

Simulated back reflection and transmission x-ray laue patterns have been generated on a digital computer of beta-SiC and alpha-SiC polytypes 2H, 4H, 6H, and 15R. For each polytype, the Laue patterns corresponding to the 100, 001, 111 and 210 crystal orientations are generated as well as the corresponding stereogram. The Laue Patterns are based on a specimen to film distance of 3.0cm, and each Laue spot is scaled in proportion to the relative intensity of the particular reflection and the number of superimposed reflection orders. Only those hkl values consitent with the space group vanishings of the particular polytype are plotted. The simulated Laue patterns are presented in indexed and unindexed plots to enhance pattern symmetry recognition. The use of these patterns for the rapid identification of polytype is demonstrated.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE