Accession Number:

ADA011282

Title:

The Electrical and Metallurgical Properties of Defects in Compound Semiconductors.

Descriptive Note:

Final rept. 7 Oct 68-7 Feb 75,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1975-04-01

Pagination or Media Count:

19.0

Abstract:

The program was directed toward the following five separate projects related to the electrical, optical, and metallurgical properties of defects in compound semiconductors 1 Properties of gallium phosphide green electroluminescent diodes 2 Effects of gamma radiation on gallium arsenide crystals and gunn diodes 3 Liquid epitaxy and physical properties of AlxGa1-xAs 4 Lattice defects in annealed gallium arsenide single crystals 5 Electrical, optical, and metallurgical properties of defects in AlxGa1-xAs.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE