Accession Number:

ADA011121

Title:

Semiconductor Measurement Technology: Quarterly Report July 1 to September 30, 1974

Descriptive Note:

Corporate Author:

NATIONAL BUREAU OF STANDARDS WASHINGTON DC ELECTRONIC TECHNOLOGY DIV

Personal Author(s):

• Bullis, W. M.

Report Date:

1975-05-01

Pagination or Media Count:

62.0

Abstract:

This quarterly progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period include 1 completion of Hall effect measurements to determine activation energies of the gold donor and acceptor levels in silicon 2 successful direct measurement of fast interface state density with the circular CCD test structure and 3 demonstration of the feasibility of the use of acoustic emission as a non-destructive means for testing individual beam-lead bonds.

Descriptors:

• *QUALITY CONTROL
• *SEMICONDUCTOR DEVICES
• *SEMICONDUCTORS
• CAPACITORS
• CHARGE COUPLED DEVICES
• CRYSTAL DEFECTS
• DOPING
• ELECTRICAL RESISTANCE
• ELECTRON PROBES
• EPITAXIAL GROWTH
• HALL EFFECT
• HERMETIC SEALS
• IMPURITIES
• MASS SPECTROSCOPY
• NONDESTRUCTIVE TESTING
• OXIDES
• SILICON
• TEST METHODS
• THERMAL PROPERTIES
• THICKNESS
• THIN FILMS
• ULTRASONIC TESTS
• X RAY SPECTROSCOPY

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE