Accession Number:

ADA010915

Title:

Numerical Simulation of Charge Coupled Device Operation, Abbreviated Form

Descriptive Note:

Rept. no. 2 (Final)

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

Report Date:

1974-10-31

Pagination or Media Count:

5.0

Abstract:

The research consisted of a detailed theoretical study of the operation of both surface and buried channel charge coupled devices CCD. In the case of surface charge coupled devices, the primary results were the development of the technologically important push clock clocking scheme, the numerical simulation of the operation of two and four phase overlapping gate CCD, the estimation of the importance of interface states in limiting the charge transfer for a number of different clocking schemes, the estimation of the small signal or long time decay of the charge in surface channel CCD. In the case of buried channel CCD BCCD, the primary results were the development of detailed one and two dimensional solutions for the electrostatics of overlapping gate BCCCD, and the numerical simulation of the details of the operation of BCCCD. Finally, a new CCD device structure was explored, the Schottky barrier CCD. This new device structure may have potential applications in the manufacture of CCD in materials other than silicon.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE