Accession Number:

ADA010802

Title:

Study of the Electronic Surface State of III-V Compounds

Descriptive Note:

Semi-annual technical progress rept.

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

• Spicer, W. E.

Report Date:

1974-10-15

Pagination or Media Count:

36.0

Abstract:

In the past six months work has proceeded on studies of bulk cesium oxide, and the surface of GaAs and GaSb. The overall aim of these studies is to provide a basic understanding of the surfaces of the materials used in III-V photocathodes. The authors have oxidized bulk cesium metal and find that for low oxygen exposures the surface appears to stay metallic while O-2 ions dissolve in the bulk of the cesium. With oxidation the work function drops to a minimum of about 0.7 eV. Further oxidation raises the work function. It was found that oxidation of p type GaAs causes the bands to bend down about 0.5 eV at the surface. Work on GaSb indicates that there are neither empty nor filled surface states in the band gap.

Descriptors:

• *CESIUM
• *GALLIUM ANTIMONIDES
• *GALLIUM ARSENIDES
• *PHOTOCATHODES
• *SURFACES
• BAND THEORY OF SOLIDS
• CESIUM COMPOUNDS
• INFRARED OPTICAL MATERIALS
• INTERFACES
• OXIDES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE