Accession Number:

ADA010781

Title:

Radiation Effects on Oxides, Semiconductors, and Devices.

Descriptive Note:

Final rept. Mar 74-Jan 75,

Corporate Author:

NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF

Report Date:

1975-05-01

Pagination or Media Count:

205.0

Abstract:

Contents Oxide studies--Hole and electron transport in SiO2 films, Charge transport studies in SiO2 processing effects and implications for radiation hardening, Ionizing dose rate effects in MOS devices, Experiments on MOS capacitors fabricated on a p-type silicon substrate, Ion microanalyzer measurements on SiO2 films, Effects of bias polarity on current flow in SiO2 under electron beam injection, Studies of charge transport and charge buildup in pure SiO2 and Al-implanted pure SiO2, Determination of hole mobility in SiO2 films Semiconductor studies.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE