Accession Number:

ADA010732

Title:

Investigation of Techniques for Combining IMPATT Chips.

Descriptive Note:

Final rept. 15 May-30 Sep 74,

Corporate Author:

GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION

Personal Author(s):

• Cox,N. W.
• Rucker,C. T.
• Amoss,J. W.
• Hill,G. N.

Report Date:

1975-01-31

Pagination or Media Count:

37.0

Abstract:

This report covers initial work on the series electrical interconnection of IMPATT devices heat-sunk in parallel by way of diamond insulating heat sinks. Such chip level power combining is expected to result in higher impedance, efficiency, and power levels from individual diode packages or substrates prior to further power combining at the circuit level. The major problem encountered to date is a pronounced increase in low frequency spurious effects when two or more device chips are connected electrically in series. The long term objective of this work is to develop practical means of combining IMPATT devices at the chip level to increase the maximum power from a single microwave device package.

Descriptors:

• *CIRCUIT INTERCONNECTIONS
• *HEAT SINKS
• *IMPATT DIODES
• THERMAL PROPERTIES
• DIAMONDS
• SUBSTRATES
• MICROWAVE EQUIPMENT
• SEMICONDUCTOR JUNCTIONS
• X BAND
• METALLIZING
• ELECTRICAL INSULATION
• AVALANCHE DIODES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE