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Accession Number:
ADA010659
Title:
Room Temperature Injection Luminescence in II-VI Semiconductors.
Descriptive Note:
Final rept. Dec 71-May 74,
Corporate Author:
BOWMAR CANADA LTD OTTAWA (ONTARIO) OPTOELECTRONICS DIV
Report Date:
1975-02-01
Pagination or Media Count:
212.0
Abstract:
In a continuation of previous investigations of injection luminescent device structures several theoretical models are discussed which may account for the blue electroluminescence emission from nominally undoped or compensated ZnS diodes. An alternative objective for the investigations has involved experimental work on polycrystalline II-VI compounds and polycrystalline III-V compound materials, and the evaluation of the potential of these materials in light-emitting device applications. Other experimental studies included a comprehensive evaluation program on the morphological features of the ZnS and ZnSe powders, the microstructure of the hot-pressed II-VI and III-V compound powdered compact, the photoluminescence emission properties of the hot-pressed material before and after annealing treatment in various ZnAl alloys, and the structural analysis of polycrystalline solid solutions of II-VI and III-V compounds using x-ray diffraction techniques. Fabricated devices were evaluated in terms of their electrical and d.c. electroluminescence characteristics the latter results were correlated with the basic photoluminescence properties of the materials.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
