Accession Number:

ADA010440

Title:

Radiation and Charge Injection in A1203 Using New Techniques.

Descriptive Note:

Interim rept. 17 Jun-16 Dec 74,

Corporate Author:

RCA LABS PRINCETON N J

Personal Author(s):

• Powell,Richard J.

Report Date:

1975-01-16

Pagination or Media Count:

50.0

Abstract:

Vacuum ultraviolet VUV radiation studies of pyrolytic Al2O3 films have shown the threshold for electron-hole pair production to be approximately 7.8 eV. The voltage dependence of radiation-induced charging shows a sharp maximum with gate voltage applied during irradiation. This is interpreted as competition between electron-hole pair generation and high-field electron injection from the electrodes. Charge centroid measurements using constant-current photoinjection have shown that the initially injected charge is trapped very near the Si-Al2O3 interface. High-field electron injection experiments using a constant-current technique have shown that the injection threshold is markedly improved with 70 A or more of SiO2 between the Si and Al2O3, but this improvement is obtained at the expense of reduced radiation hardness.

Descriptors:

• *METAL OXIDE SEMICONDUCTORS
• *ALUMINUM OXIDES
• *CHARGE TRANSFER
• *RADIATION HARDENING
• *ELECTRIC CHARGE
• INJECTION
• INTERFACES
• SILICON DIOXIDE
• HOLES(ELECTRON DEFICIENCIES)
• SILICON
• VACUUM ULTRAVIOLET RADIATION
• RADIATION EFFECTS
• PHOTOELECTRONS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE