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Accession Number:
ADA010407
Title:
Electron Paramagnetic Resonance Study of GaAs Surfaces.
Descriptive Note:
Annual rept. no. 10, 1 Feb 74-31 Jan 75,
Corporate Author:
NEW SOUTH WALES UNIV KENSINGTON (AUSTRALIA) SCHOOL OF PHYSICS
Report Date:
1975-05-16
Pagination or Media Count:
35.0
Abstract:
EPR investigations of GaAs and other semiconductor surfaces in this laboratory have yielded unique information about surface wave functions and surface charged sites. This basic information is required for understanding GaAs surfaces covered with cesium and oxygen which are of technological importance in night vision and other devices. To obtain sufficient EPR signal the large surfaces of powders were studied, obtained by crushing in ultra high vacuum. However more detailed information is obtainable from oriented cleaved single crystal surfaces and rather elaborate experimental arrangements have been constructed to obtain such data. The results for GaAs show that the single crystal surface signals are much caused an intensive investigation of the possible differences between powder and single crystal cleaved surfaces. Because of the large and easier to measure signals from silicon, studies were focussed on this material.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
