Heterojunction Contacts for Transferred-Electron Devices.
Annual summary rept. no. 1, 1 Feb 74-28 Feb 75,
COLORADO UNIV BOULDER DEPT OF ELECTRICAL ENGINEERING
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The aim of the research described in this annual report is the development of heterojunction contacts for transferred-electron devices for high millimeter frequencies. The details of a liquid phase epitaxial growing system are described and results of the growth of InP and InxGa1-xAs epitaxial layers on InP substrates are given. There is a brief discussion of a computer simulation program that has been developed and the research program plans for the next year.
- Electrical and Electronic Equipment
- Solid State Physics