Accession Number:

ADA010216

Title:

Heterojunction Contacts for Transferred-Electron Devices.

Descriptive Note:

Annual summary rept. no. 1, 1 Feb 74-28 Feb 75,

Corporate Author:

COLORADO UNIV BOULDER DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Hayes,Russell E.

Report Date:

1975-05-01

Pagination or Media Count:

33.0

Abstract:

The aim of the research described in this annual report is the development of heterojunction contacts for transferred-electron devices for high millimeter frequencies. The details of a liquid phase epitaxial growing system are described and results of the growth of InP and InxGa1-xAs epitaxial layers on InP substrates are given. There is a brief discussion of a computer simulation program that has been developed and the research program plans for the next year.

Descriptors:

• *MICROWAVE EQUIPMENT
• *SEMICONDUCTOR DEVICES
• COMPUTERIZED SIMULATION
• GALLIUM ARSENIDES
• ENERGY GAPS
• EPITAXIAL GROWTH
• SUBSTRATES
• CATHODES
• CONDUCTION BANDS
• SEMICONDUCTING FILMS
• INDIUM PHOSPHIDES
• INDIUM COMPOUNDS
• GUNN EFFECT

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE