Accession Number:

ADA010041

Title:

Analysis of Semiconductor Structures by Nuclear and Electrical Techniques: Silicide Formation.

Descriptive Note:

Interim rept.,

Corporate Author:

CALIFORNIA INST OF TECH PASADENA DIV OF ENGINEERING AND APPLIED SCIENCE

Report Date:

1975-01-31

Pagination or Media Count:

86.0

Abstract:

The report presents three studies of silicide formation in systems composed of single crystal silicon overlaid with a metal film. Common to all this work is the use of MeV He ion backscattering and glancing angle x-ray diffraction as the principal analytical tools. Backscattering data gives composition as a function of depth and hence can be used to determine growth kinetics while x-ray diffraction gives identification of phases and structural information. Work is reported in the following areas Implanted noble gas atoms as diffusion markers in silicide formation Structure and growth kinetics of Ni2Si on silicon Iron silicide thin film formation at low temperatures.

Subject Categories:

  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE