Semi-annual technical rept. 1 Nov 1974-30 Apr 1975
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
Pagination or Media Count:
Microstructure development during the sintering of densifying and non-densifying powders of beta-SiC was observed. The kinetics of grain growth and porosity decrease in the densifying powders, as well as the microstructure development, were found to be very similar to those observed in oxide powders. It was found that the resistivity of B containing, dense sintered beta-SiC could be changed through compensation of the B acceptors by N donors introduced from the sintering furnace atmosphere during firing. The thermal EMF of a junction made of p and n types of dense, sintered beta-SiC was measured over the temperature range from 100C to 1500C.
- Ceramics, Refractories and Glass
- Solid State Physics