New Passivation Methods for GaAs
Final technical rept. 1 Jan-31 Dec 1974
NEWCASTLE-UPON-TYNE UNIV (UNITED KINGDOM) DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING
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The fabrication of high-quality oxides on GaAs with good electrical interface properties was investigated. The best results were obtained with a new anodization scheme based on an aqueous solution of tartaric or citric acid with glycol, and a subsequent annealing at 250C. In view of increased corrosion resistance of the resulting oxides if some amount of Al is included, and in view of an optimization of interface lattice matching, semi-insulating GaAlAs was grown by sliding-boat liquid-phase epitaxy prior to anodization. A new method of depositing pure Al2O3 by slow evaporation of Al through an O2 atmosphere of 0.0005 torr also gave encourgaging results which could be understood by the fact that this method is akin to that of molecular-beam epitaxy. The best electrical interface properties obtained make the results useful for optical devices and for MOS device applications.
- Electrical and Electronic Equipment
- Solid State Physics