Preparation and Characterization of HgCdSe Alloys.
Progress rept. 20 May 74-20 Feb 75,
MCDONNELL DOUGLAS RESEARCH LABS ST LOUIS MO
Pagination or Media Count:
Ingots of Hg1-xCdxSe alloys having average x-values of 0.14, 0.18, 0.26, and 0.40 were prepared by reacting the elemental consitituents in evacuated, sealed, quartz tubes. The ingots were recrystallized by traveling-gradient and Bridgman methods to obtain single-crystal regions up to 4 cm in length. Measurements were made on selected specimens, cut from these ingots, of the 4.2 - 300 K electrical resistivity and Hall coefficient, the 1.2 - 4.2 K oscillatory magnetoresistance, and the infrared transmittance. Preliminary analyses were made of the temperature dependence of electron mobility and the composition dependence of the band-gap energy in the Hg1-xCdxSe alloys. At 300 K, the optical gap as a function of x is given by the relation E sub g -0.06 1.50 x eV, which gives x 0.44 as the composition required for a 2.05 micrometer detector. Work is continuing on alloy purification and crystal-growth, material parameters, and the spectral photoconductivity of alloys for which 0.35 or x or 0.48.
- Infrared Detection and Detectors
- Solid State Physics