Accession Number:

ADA009438

Title:

Investigation of Electronic Transport, Recombination and Optical Properties in InAs(1-x)P(x) Alloy Systems

Descriptive Note:

Semi-annual technical rept. no. 2, Jun-Dec 1974

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1974-12-15

Pagination or Media Count:

64.0

Abstract:

A systematic study has been carried out on the dependence of the electron mobility and concentration on the epitaxial layer thickness for seven InAs0.65P0.35 epitaxial samples with film thickness varying from 10 micrometers to 4 micrometers. It was found that an epilayer thickness around 6 micrometers yields the highest electron mobility and lowest electron concentration for this set of samples. A technique has been developed in the Laboratory to examine the atomic composition, the epilayer thickness and the homogeneity of the epilayer using Electron Microprobe Analysis. The optical absorption coefficient as a function of wavelength near the fundamental absorption edge was plotted for 13 epitaxial samples of different alloy compositions. The energy band gap versus alloy composition for these samples was also determined.

Subject Categories:

  • Infrared Detection and Detectors
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE