Accession Number:

ADA009207

Title:

Amphoteric Dopants in the Active Region of GaAs Lasers.

Descriptive Note:

Final rept.,

Corporate Author:

SOUTHERN METHODIST UNIV DALLAS TEX DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1974-05-15

Pagination or Media Count:

15.0

Abstract:

Double heterojunction lasers were fabricated with Ge and Si in the active region. Spontaneous diodes were fabricated with and without Si and diodes without Si exhibited a shorter wavelength spectral peak by about 9 meV. Diodes with Te compensation were similar to diodes without compensation. The lasers had a characteristic spectral peak at approximately 9000 A. The best quantum efficiency incremental measured was approximately 22 percent 0.32 wattsamp. This form of doping in the active region appears to produce diodes which are very favorable with respect to threshold current. Towards the end of the activity a laser wafer was obtained with the same configuration except with Te in lieu of Si as the compensating impurity.

Subject Categories:

  • Lasers and Masers
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE