Hydrostatic Pressure Effects on Interband Transitions of Semiconductors.
Final rept. Jan-Dec 73,
BELFER GRADUATE SCHOOL OF SCIENCE NEW YORK
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The purpose of this report is to describe the effect of hydrostatic pressure on the interband transitions of GaAs, ZnSeAl, and GaPN diodes. Combined electroreflectance with hydrostatic pressure techniques was used to study the dependence of the E sub 1 and E sub 1 delta sub 1 transition of GaAs, while the pressure dependence of the direct edge transition E sub 0 of GaAs was determined from photocurrent measurements. Photocurrent and electroluminescence measurements were performed on a ZnSeAl light emitting diode under the influence of hydrostatic pressure in order to provide a more nearly complete understanding of the radiative-recombination process at room temperature and also to study the behavior of the deep level centers under hydrostatic pressure. The measurements performed under hydrostatic pressure indicated that the deep lying impurity levels possess a larger deformation potential than the direct edge. It was found that the intensity of the A-line decreases with increasing pressure, in both of the measurements.
- Solid State Physics