Properties of Avalanche Transit-Time Devices. Volume 2.
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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An extensive simulation of the IMPATT mode of operation of two X-band Read-type diodes, ten X-band low-high-low diodes, four X-band one-sided abrupt diodes and two K-band realistic p-n junction diodes had been conducted for different bias current densities, frequencies, RF voltages and temperatures. The effects of various device parameters and operating conditions on diode performance have been investigated and discussed. A set of general guidelines for designing Si IMPATT diodes is presented. Simulations have also been done for the TRAPATT mode of operation of fourteen Si avalanche-diode structures at different frequencies and bias current densities. Effects of various device parameters and operating conditions on RF performance have been studied and discussed.
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