Properties of Avalanche Transit-Time Devices. Volume 1.
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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The objectives of this study are two-fold. One is to develop a very general large-scale computer simulation model for semiconductor devices. The other is to simulate various Si avalanche diode structures operating in the IMPATT and TRAPATT modes at different operating conditions in order to investigate the effects of various parameters on the performance of these avalanche diodes.
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