Accession Number:

ADA009041

Title:

Properties of Avalanche Transit-Time Devices. Volume 1.

Descriptive Note:

Doctoral thesis,

Corporate Author:

MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s):

Report Date:

1975-03-01

Pagination or Media Count:

288.0

Abstract:

The objectives of this study are two-fold. One is to develop a very general large-scale computer simulation model for semiconductor devices. The other is to simulate various Si avalanche diode structures operating in the IMPATT and TRAPATT modes at different operating conditions in order to investigate the effects of various parameters on the performance of these avalanche diodes.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE