Accession Number:

ADA008855

Title:

A Model for the Discharge of Radiation-Induced Space Charge in MOSFET's.

Descriptive Note:

Final rept. Jul 71-Aug 74,

Corporate Author:

AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX

Personal Author(s):

• Maier,R. J.

Report Date:

1975-02-01

Pagination or Media Count:

17.0

Abstract:

Rapid annealing of the positive space charge in irradiated Si-SiO2 metal systems is due to Quantum mechanical tunneling of electrons from the valance band to the trapped hole. The annealing factor increases and the total effect is reduced at all times by lower temperature processing or any technique which concentrates the traps near the interfaces.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *MOSFET SEMICONDUCTORS
• *RADIATION EFFECTS
• MATHEMATICAL MODELS
• ANNEALING
• SILICON DIOXIDE
• TUNNELING(ELECTRONICS)
• HOLES(ELECTRON DEFICIENCIES)
• SILICON
• QUANTUM ELECTRONICS
• BAND THEORY OF SOLIDS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE