Accession Number:

ADA008850

Title:

Damage Profiles in Silicon and Their Impact on Device Reliability

Descriptive Note:

Technical rept. no. 5

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

• Schwuttke, Guenter H.

Report Date:

1975-02-01

Pagination or Media Count:

62.0

Abstract:

This report consists of two parts. Part one describes a new approach for semiconductor batch processing and is concerned with the reduction or elimination of crystal defects due to high temperature processing. Temperature gradient measurements and x-ray topography are used to characterize silicon wafers before and after batch processing. It is shown that defects in wafers due to heat cycling are substantially reduced through closed boat processing. Part two describes an efficient measurement technique that permits measurements of generation lifetime in the range of about or lmsec to much .lnsec. For the measurements, a metal oxide semiconductor MOS capacitor is biased into strong inversion and subsequently switched into deep depletion. An experimental setup prints out or displays a typical recovery time which is introduced into a computer fed by the theoretical generation model and the wafer data.

Descriptors:

• *CRYSTAL DEFECTS
• *SEMICONDUCTOR DEVICES
• *SILICON
• DAMAGE
• FABRICATION
• HEAT TREATMENT
• INSTRUMENTATION
• MEASUREMENT
• RELIABILITY(ELECTRONICS)
• SURFACE PROPERTIES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE