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Laser Light Scattering from Electrons and Phonons in Wide Bandgap Semiconductors.
Final rept. Jun-Aug 74,
COLORADO UNIV BOULDER DEPT OF PHYSICS
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The aim of this study was the detection and characterization of impurity states in II-VI and I-III-VI2 semiconductors. Three techniques were employed to this end 1 EPR at various temperatures 2 local mode vibrational Raman spectroscopy 3 spin-flip laser scattering at very high fields or 150 kG. These studies of impurity states facilitate the development of quality control standards for two important classes of semiconductors. Substitutional impurities play a key role in the operation of p-n junction devices in these materials. It was felt that the detection of impurity states with very high g-values of order ten might lead to spin-flip lasers operative in the near IR with large tuning ranges. In fact, impurities with g approximately equal to 8 have been found in both CuAlS2 and CuGaS2 in the present study.
APPROVED FOR PUBLIC RELEASE