Accession Number:

ADA008479

Title:

Preparation and Properties of Single Crystal ZnSe.

Descriptive Note:

Interim rept.,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MASS

Personal Author(s):

• Larkin,J. J.
• Hilton,R. M.
• Lipson,H. G.
• Klausutis,N.

Report Date:

1975-01-01

Pagination or Media Count:

9.0

Abstract:

Growth of ZnSe has been investigated by a variety of techniques. Polycrystalline boules of this material have been pulled from the stoichiometric melt by the liquid encapsulated Czochralski LEC technique. Single crystals have been produced by chemical vapor transport CVT with iodine vapor and by a modified Bridgman method suggested by Fischer under high pressure. LEC Czochralski boules grown from Cerac starting materials were polycrystalline. Cerac ZnSe was transported through a temperature gradient at 820C by I2 vapors. A general reduction in all impurities was determined by mass spectrographic analysis. Crystal quality is good in the lower half of Bridgman boules.

Descriptors:

• *CRYSTAL GROWTH
• *ZINC SELENIDES
• *INFRARED WINDOWS
• OPTICAL PROPERTIES
• SINGLE CRYSTALS
• VAPOR DEPOSITION
• INFRARED LASERS
• POLYCRYSTALLINE

Subject Categories:

• Lasers and Masers
• Crystallography
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE