Accession Number:

ADA008050

Title:

Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe,

Descriptive Note:

Corporate Author:

INTELCOM RAD TECH SAN DIEGO CALIF

Personal Author(s):

• Mallon,Charles E.
• Green,Barry A.
• Leadon,Roland E.
• Naber,James A.

Report Date:

1974-12-31

Pagination or Media Count:

52.0

Abstract:

This report discusses the results of experimental and theoretical investigations of the effects of electron, neutron, and gamma irradiation on the optical and electrical properties of the alloy semiconductor HgCdTe. These effects are of major interest in this program, since this data can be used to predict the radiation response of devices fabricated from HgCdTe. Section 2 discusses experimental methods used in this effort. The results of a 10K neutron irradiation of an n-type sample, QM 48-19, are presented. Changes in lifetime, carrier density, Hall mobility, and conductivity at 80K were studied as a function of electron energy between 2 and 30 MeV. Preirradiation temperature dependence measurements of carrier density, Hall mobility, conductivity, and steady-state photoconductivity of a p-type HgCdTe sample, QM 1, are presented. This sample was irradiated at 80K with 5-MeV electrons, which resulted in type conversion from p-type to n-type. The final section presents mobility and lifetime analysis and correlates the effects observed for neutron, gamma, and electron irradiations.

Descriptors:

• *INFRARED DETECTORS
• *RADIATION EFFECTS
• OPTICAL PROPERTIES
• TEMPERATURE
• HALL EFFECT
• CHARGE CARRIERS
• SEMICONDUCTOR DEVICES
• ELECTRICAL PROPERTIES
• GAMMA RAYS
• CADMIUM TELLURIDES
• TELLURIDES
• ABSORPTION
• MERCURY COMPOUNDS
• ELECTRON IRRADIATION
• NEUTRONS

Subject Categories:

• Infrared Detection and Detectors
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE