Accession Number:

ADA007431

Title:

Ion Implantation Sources and Source Materials.

Descriptive Note:

Technical rept.,

Corporate Author:

ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1975-01-01

Pagination or Media Count:

95.0

Abstract:

The method of doping semiconductors through the use of ion implantation has become of great industrial interest. The ability to measure accurately the quantity of ions being implanted in the sample allows better control of concentration than is possible with diffusion. This close control is particularly important in MOS threshold voltage adjustment. The ability to create pure, high current, stable beams of various dopant materials is the primary concern of this work. First, the basic elements of an implanter and ion sources are reviewed, with an emphasis on the mechanisms of beam creation. Then, the mass spectra beam analysis obtained from three sources on an Accelerators Inc. 300-MP ion implanter are given for a variety of source materials. Finally, for each source material, recommendations are made as to which source produces the desired beam characteristics.

Subject Categories:

  • Fabrication Metallurgy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE