Complementary MOS Transistors in Micropower Circuits.
STANFORD UNIV CALIF STANFORD ELECTRONICS LABS
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Complementary MOS transistor CMOST circuits offer great potential for very low power operation. These circuits are analyzed to determine their ultimate obtainable performance, and fabrication techniques are developed that produce circuits with the lowest power-speed product reported to date. The MOST is treated as a distributed nonlinear transmission line to investigate the detailed nature of its transient response. These methods are applied to the analysis of the switching performance of CMOST logic gates. This analysis predicts that power consumption has no lower bound if the gate can be operated at low voltages and if the transistors are small enough. A new MOST model is developed that describes effects that become significant at small voltages and sizes. A method for adjusting MOST threshold voltage by ion implantation is described.
- Electrical and Electronic Equipment