Noise in Microwave Semiconductor Oscillators and Amplifiers. Part II. Noise Properties of IMPATT Devices.
Final rept. 1 Jul 71-20 Dec 73,
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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The purpose of this study is to investigate the noise properties of IMPATT diodes as a function of device structure, material parameters and operating conditions to determine the optimum noise performance which is achievable for IMPATT diodes when they are used as oscillators and amplifiers to obtain an improved physical understanding of noise and its relationship to other important nonlinear properties such as the dc-to RF conversion efficiency and RF power generation of IMPATT devices and to derive important design and operating criteria regarding noise, efficiency and power for oscillator and amplifier applications using IMPATT diodes. In order to achieve these goals, a comprehensive study of the noise properties of IMPATT diodes has been carried out.
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