Accession Number:

ADA003989

Title:

Electronic Raman Effect in Garnets, Tunable Infrared Lasers, and Quantum Counters.

Descriptive Note:

Final rept. 1 Mar 71-31 Aug 74,

Corporate Author:

YALE UNIV NEW HAVEN CONN DEPT OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s):

Report Date:

1974-10-01

Pagination or Media Count:

61.0

Abstract:

The Raman technique has been applied to study some basic properties of rare-earth garnets. Preliminary investigations have been performed on a tunable IR quantum counter and HoYIG laser. Using Raman scattering, the following were determined 1 the phonon energy and symmetry assignments of numerous garnets YAlG, DyAlG, YbAlG, LuAlG, YGaG, DyGaG, YbGaG, LuGaG, YIG, DyIg, ErIG, and YbIG 2 the energy of the lower crystal-field levels 10-4000cm in YbAlG, YbGaG, DyAlG, DyGaG, and ErIG 3 the dipole and exchange-field splittings of several electronic levels for DyAlG below its Neel temperature and 4 the accuracy of the crystal-field parameters by comparing the calculated with the observed Raman intensity. The large anisotropic exchange interaction between the Fe3 and Re3 ions in ReYIG can form the basis for tunable IR quantum counters and lasers. A tunable quantum counter in the 5 micrometer region is proposed by using PrYIG. The author has achieved laser action by optically pumping with a Ndglass laser into the absorption band of the host crystal YIG. Based on this achievement, it is estimated that lasing from a 100 micrometer thick slab of HoYIG is possible by pumping with a single GaAs laser diode.

Subject Categories:

  • Lasers and Masers
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE