Electronic Properties and Structure of Aperiodic Materials
Final scientific rept. 1 Feb 1967-30 Sep 1974
WASHINGTON UNIV SEATTLE DEPT OF PHYSICS
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Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT and LSA Gunn diodes, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.
- Electrical and Electronic Equipment
- Solid State Physics