Accession Number:

ADA003980

Title:

Electronic Properties and Structure of Aperiodic Materials

Descriptive Note:

Final scientific rept. 1 Feb 1967-30 Sep 1974

Corporate Author:

WASHINGTON UNIV SEATTLE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1974-11-30

Pagination or Media Count:

15.0

Abstract:

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes epitaxial growth of ultra-thin and high-resistivity films, study of the relationship between device performance and material parameters using IMPATT and LSA Gunn diodes, growth of semi-insulating substrates and characterization techniques, and study of ion implantation as a tool for microwave device fabrication.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE