Accession Number:

ADA003894

Title:

Research on Photoelectronic Imaging Devices.

Descriptive Note:

Annual rept. no. 4 (Finals),

Corporate Author:

RHODE ISLAND UNIV KINGSTON DEPT OF ELECTRICAL ENGINEERING

Report Date:

1974-10-01

Pagination or Media Count:

222.0

Abstract:

The study of the activation processes for achieving negative electron affinity NEA in Ge-doped GaAs layers grown by liquid phase epitaxy is described. Apart from the III-V compounds, NEA has been reported in silicon. The literature suggests that the details of the adsorption of oxygen and Cs on the surface are of crucial importance in achieving NEA surfaces on silicon. A study is reported of the role of dislocations in the adsoprtion of oxygen on the Si 100 surface. Studies on silver sulfide targets for vidicons, and of the heterojunction structure Metal-Silicon Monoxide-Gallium Arsenide are also described. In the educational area a wide ranging set of courses was established to guide the student from the senior level to the advanced graduate stage in solid state physics, optics, electronics, information theory and signal processing.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE