Reliability Prediction for Microwave Transistors.
Interim rept. 1 Feb 73-30 Apr 74,
GENERAL ELECTRIC CO SYRACUSE N Y ELECTRONICS LAB
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This report presents the results of the first fifteen months of effort on a program to evaluate the failure mechanisms that occur in state-of-the-art microwave power transistors, and to predict the reliability and lifetime that might be expected from these devices. A series of accelerated rf life tests are being performed followed by detailed failure analyses. Both gold and aluminum metallized devices are being evaluated. The initial work was done on the MSC 1315 and PHI 1510 devices.
- Electrical and Electronic Equipment