Short-Pulse Switches for Airborne High-Power Supplies.
Interim rept. 1 Jul 73-30 Jun 74,
PURDUE UNIV LAFAYETTE IND SOLID STATE DEVICES AND MATERIALS RESEARCH LAB
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Corbino disc devices of InSb are fabricated for use as high power switches. Resistance is increased from on state to off state by application of a pulsed, coaxial magnetic field. InSb with doping of 10 to the 15th power-10 to the 17th power donors per cc is used for switching currents from 20 to 1000 amperes. Off to on resistance ratios of 200 are observed at currents of 20 amperes. Testing at higher currents leads to a surface breakdown phenomena which limits the resistance ratio to values considerably below theoretical predication. It is proposed that proper surface passivation would eliminate this problem. Bulk silicon is also investigated for use as a high current switch. Devices have been tested with incandescent lamp, laser, and electron beam input. Though resistance changes of 2-4 orders of magnitude are observed, high contact resistance is a limiting factor in obtaining a low on resistance. The use of ion-implanted contact regions is proposed for improving contacts.
- Electrical and Electronic Equipment
- Electric Power Production and Distribution