Accession Number:

ADA003511

Title:

Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy

Descriptive Note:

Final rept. 20 Apr 1972-30 Jun 1974

Corporate Author:

JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB

Personal Author(s):

Report Date:

1974-12-31

Pagination or Media Count:

24.0

Abstract:

The Mossbauer effect in tellurium-125 was used to investigate the amorphous to crystalline transition in tellurium thin films. Techniques were developed for producing amorphous tellurium thin films and subsequently crystallizing them during the Mossbauer experiments. During the course of the work several Mossbauer tellurium sources were prepared and studied for narrow line high recoil-free fraction performance. Spectra of amorphous and crystalline tellurium films were compared in which the amorphous phase consistently showed an increased quadrupole splitting and a decreased recoil- free sample.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE