Final rept. 1 Jun 1972-30 Aug 1974
HUGHES RESEARCH LABS MALIBU CA
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The objectives of this program were to study and analyze the propagation, attenuation, modulation, and detection of coherent optical waves in thin film waveguides, in particular, epitaxial semiconductor structures at a wavelength of 8500 A, to determine the parameters controlling the solution regrowth epitaxy of the Ga1-xAlxAs system, to study the influence of the index discontinuity and semiconductor carrier concentration on optical properties, and to develop the elementary optical device elements. Early in the program the authors conducted theoretical and experimental studies to define the epilayer material and structure requirements for factors affecting waveguiding. The results described in this report demonstrate that Ga1-xAlxAs epitaxy is a practical means of producing low loss waveguides for integrated optics and that monolithic device elements can also be produced on the wafer. However some additional work is needed to fully optimize waveguide structures, and much work is required to develop practical monolithic device elements for optical integrated circuits.
- Electrical and Electronic Equipment
- Fiber Optics and Integrated Optics