Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe,
INTELCOM RAD TECH SAN DIEGO CALIF
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This report discusses the results of experimental and theoretical investigation of the effects of irradiation electron, neutron, and gamma on the electrical and optical properties of the alloy semiconductor HgCdTe. The effects of radiation on the electrical and optical properties are of major interest in this program, since this data can then be used to predict radiation response of devices fabricated from HgCdTe. These results include measurements of the carrier concentration, Hall mobility, carrier lifetime, photoconductive spectral response, and optical transmission before irradiation, as a function of irradiation fluence, and as a function of anneal temperature. Theoretical analysis and models are presented to explain irradiation-produced changes.
- Infrared Detection and Detectors
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics