Accession Number:

ADA003005

Title:

Sputtered Thin Film Research

Descriptive Note:

Semi-annual technical rept. no. 5, 15 Apr 1972-30 Sep 1974

Corporate Author:

UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT

Report Date:

1974-11-01

Pagination or Media Count:

214.0

Abstract:

The reactive rf sputtering technique was applied to the preparation of a wide variety of materials. Single crystal films of ZnO, TiO2, WO3 AlN and GaN were grown on one or more of the insulating crystalline substrates of Al2O3, MgAl2O3, SiC and LiNbO3. Data on the deposition parameters, structure and optical waveguiding characteristics of the heteroepitaxial structures are presented. Reactive sputtering using sublimed arsenic as the sputtering gas inside a heated vacuum chamber was used to grow epitaxial films of GaAs. The controlled growth of single crystal alloys of Ga1-xAlxAs at low temperatures was also demonstrated. Structural, optical and electrical characteristics of these films are presented. Conditions were determined for the deposition of amorphous neodymium ultraphosphate films. Low loss optical wave guide structures were fabricated. Charge storage characteristics of MIS structures were investigated. These employed a composite insulator formed by sputtering 1000A of strontium titanate over a 20A thick thermally grown silicon dioxide layer on silicon.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE