Electron Beam Semiconductor Amplifier (L-Band).
Final rept. 1 Jun 70-31 May 74,
WATKINS-JOHNSON CO PALO ALTO CALIF
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The goal of the program was to design, develop, fabricate and test exploratory developmental models of a pulsed, L-band, RF amplifier capable of 2 kilowatts peak output power at 1300 MHz with 25 dB power gain and 50 percent efficiency.
- Electrical and Electronic Equipment