Operating Characteristics of IMPATT Diodes.
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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The purpose of the study is to investigate the operation of IMPATT diode oscillators with a variety of doping profiles and to compare the experimental operating results with those predicted from theory. In order to accomplish the objective, a method of diode fabrication was developed which allowed a variety of different diode structures to be fabricated and experimentally evaluated. Various experimental and computer techniques were used to characterize the diodes. These methods allow the diode impurity profile to be determined and indicate the thermal operating limits of the devices. The experimental work on the fabricated diodes with known impurity profiles is also described. Several differences in the operation of npp and pnn diodes with varying structures are discussed and compared with theoretically predicted results.
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