Research to Optimize Growth Techniques for Single Crystals.
Final rept. 1 Jul 71-30 Jun 74,
EAGLE-PICHER INDUSTRIES INC MIAMI OKLA MIAMI RESEARCH LABS
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The synthesis from the elements of various high purity semiconductor materials of the Group II-VI compound type is discussed. A description of the pressure furnace system used for melting these compounds is given. The growth of crystals of pure II-VI compounds from the melt using this pressure furnace system is reported. In particular, melt crystal growth programs of ZnS, ZnSe, CdS, CdSe, and ZnTe are defined, including the results of special doping attempts on some of these crystals. It is concluded that the crystal growth processes described herein are practical for use with II-VI compound semiconductor materials. They are particularly recommended for the uniform doping of crystals.
- Solid State Physics