Aluminum Nitride for Surface Acoustic Waves.
Final rept. 2 Jan-30 Jun 74,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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Aluminum nitride films of single crystal quality have been grown upon single crystal R-plane sapphire substrates. It was demonstrated that AlN could also be grown upon another AlN film that had been polished. In this manner thick films of 10 micrometers thickness or greater could be obtained. Scanning electron microscopy was used to evaluate the as-grown film morphology and show the micro-structure orientation coherence. The surface acoustic wave properties of the film were measured out to a film thickness to wavelength ratio of 0.75.
- Electrical and Electronic Equipment