Accession Number:
ADA001977
Title:
The Physics of Interface Interactions Related to Reliability of Future Electronics Devices
Descriptive Note:
Final rept. 1 Aug 1973-31 Jan 1974
Corporate Author:
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
Personal Author(s):
Report Date:
1974-01-31
Pagination or Media Count:
97.0
Abstract:
Contents The reliability of semiconductor-insulator interfaces-- Photon induced dielectric breakdown in SiO2, and Photon assisted tunneling in internal photoemission I. theory Band structure and switching in metal oxide insulators--Electronic contact barriers and morphology of Nb2O5 thin films, and Electronic structure of the SiO2Si3N4 interface Instabilities associated with metal-glass interaction--Surface reactions on MOS structures, Densification of SiO2 by exposure to an ion beam, and Epitaxial growth of Nickel Silicide NiSi2 on Silicon.
Descriptors:
- *INTEGRATED CIRCUITS
- *INTERFACES
- *METAL OXIDE SEMICONDUCTORS
- *SEMICONDUCTOR DEVICES
- BAND THEORY OF SOLIDS
- EPITAXIAL GROWTH
- ION BOMBARDMENT
- NICKEL COMPOUNDS
- NIOBIUM COMPOUNDS
- PHOTOELECTRIC EMISSION
- RELIABILITY(ELECTRONICS)
- SCHOTTKY BARRIER DEVICES
- SILICIDES
- SILICON DIOXIDE
- SILICON NITRIDES
- SURFACE REACTIONS
- THIN FILMS
- TUNNELING(ELECTRONICS)
- X RAY DIFFRACTION
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics