Accession Number:

ADA001977

Title:

The Physics of Interface Interactions Related to Reliability of Future Electronics Devices

Descriptive Note:

Final rept. 1 Aug 1973-31 Jan 1974

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1974-01-31

Pagination or Media Count:

97.0

Abstract:

Contents The reliability of semiconductor-insulator interfaces-- Photon induced dielectric breakdown in SiO2, and Photon assisted tunneling in internal photoemission I. theory Band structure and switching in metal oxide insulators--Electronic contact barriers and morphology of Nb2O5 thin films, and Electronic structure of the SiO2Si3N4 interface Instabilities associated with metal-glass interaction--Surface reactions on MOS structures, Densification of SiO2 by exposure to an ion beam, and Epitaxial growth of Nickel Silicide NiSi2 on Silicon.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE