Infrared Devices Related to Continuously Voltage Tuneable Line Absorption in Surface Quantization.
YALE UNIV NEW HAVEN CONN DEPT OF ENGINEERING AND APPLIED SCIENCE
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The aim of this research has been to refine the physics associated with the energy levels involved at the interface between silicon and silicon dioxide as exemplified in an n-channel MOSFET structure. Demonstration of the photoresistive response of devices to radiation resonant with energy levels in the inversion layer has allowed characterization of a voltage tuneable infrared detector-spectrometer. Operating at 4.2K, typical devices have continuous tuneability from 8 mev about 150 micrometers to 30 mev about 40 micrometers, a band width of approximately 1 mev, a response time of 0.00025 seconds and a noise equivalent power NEP of approximately 10 to the -11th power watts. Outlines for methods of improvement in terms of band range, band width and noise equivalent power have been obtained.
- Infrared Detection and Detectors
- Solid State Physics