Radiation Hardened CMOS,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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The status and methods of qualifying radiation hardened CMOS on bulk and on SOS is presented and the remaining hardening problems, such as radiation-induced photoconductivity in the sapphire substrate, are put in perspective. In addition to new radiation effects data on numerous hardened gate insulators, new radiation effects and problem areas relating to gate electrodes and substrate dielectrics are presented.
- Electrical and Electronic Equipment