Accession Number:

ADA001627

Title:

Radiation Hardened CMOS,

Descriptive Note:

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s):

• Buchanan,Bobby
• Shedd,Walter
• Neamen,Donald A.
• Roosild,Sven A.

Report Date:

1974-10-16

Pagination or Media Count:

5.0

Abstract:

The status and methods of qualifying radiation hardened CMOS on bulk and on SOS is presented and the remaining hardening problems, such as radiation-induced photoconductivity in the sapphire substrate, are put in perspective. In addition to new radiation effects data on numerous hardened gate insulators, new radiation effects and problem areas relating to gate electrodes and substrate dielectrics are presented.

Descriptors:

• *METAL OXIDE SEMICONDUCTORS
• *RADIATION HARDENING
• INTEGRATED CIRCUITS
• SUBSTRATES
• SAPPHIRE
• SILICON
• TRANSISTORS
• RADIATION EFFECTS
• INVERTER CIRCUITS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE