Accession Number:

ADA001626

Title:

Permanent Ionizing Radiation Effects in Gate and Isolation Dielectrics in FETs,

Descriptive Note:

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s):

• Neamen,Donald A.
• Shedd,Walter M.
• Buchanan,Bobby L.

Report Date:

1974-10-16

Pagination or Media Count:

4.0

Abstract:

The permanent ionizing radiation effects resulting from the use of dielectrics including sapphire to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads Si. Radiation-induced positive charge trapping occurs in the isolation dielectrics which causes leakage currents to flow in n-channel enhancement mode MOSFETs fabricated in SOS. Experimental junction FETs were fabricated so that the effect of the radiation-induced charge trapping in the isolation dielectrics could be determined by measuring the JFET parameters.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *RADIATION EFFECTS
• DIELECTRICS
• METAL OXIDE SEMICONDUCTORS
• RADIATION HARDENING

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE