Permanent Ionizing Radiation Effects in Gate and Isolation Dielectrics in FETs,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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The permanent ionizing radiation effects resulting from the use of dielectrics including sapphire to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads Si. Radiation-induced positive charge trapping occurs in the isolation dielectrics which causes leakage currents to flow in n-channel enhancement mode MOSFETs fabricated in SOS. Experimental junction FETs were fabricated so that the effect of the radiation-induced charge trapping in the isolation dielectrics could be determined by measuring the JFET parameters.
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