Accession Number:
ADA001626
Title:
Permanent Ionizing Radiation Effects in Gate and Isolation Dielectrics in FETs,
Descriptive Note:
Corporate Author:
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Personal Author(s):
Report Date:
1974-10-16
Pagination or Media Count:
4.0
Abstract:
The permanent ionizing radiation effects resulting from the use of dielectrics including sapphire to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads Si. Radiation-induced positive charge trapping occurs in the isolation dielectrics which causes leakage currents to flow in n-channel enhancement mode MOSFETs fabricated in SOS. Experimental junction FETs were fabricated so that the effect of the radiation-induced charge trapping in the isolation dielectrics could be determined by measuring the JFET parameters.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment