Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Pagination or Media Count:
The permanent ionizing radiation effects resulting from the use of dielectrics to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads Si and for various dielectric isolation techniques. The experimental vehicles used for making these determinations were dielectrically isolated. JFETs operated in such a manner that they behaved as a combination junction-MOS field-effect transistor. The experimental results observed by measuring the saturation current, turn-off voltage, maximum transconductance, and channel conductance of the junction FET show a non-monotonic relationship in the effects of a positive charge build-up in the silicon dioxide isolation dielectric with increasing dose. A theoretical model is derived for calculating the interface charge density as a function of the measurable JFET device parameters.
- Electrical and Electronic Equipment