Accession Number:

ADA000794

Title:

Photo Emission from a Silicon P-N Junction.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1971-01-01

Pagination or Media Count:

21.0

Abstract:

Light emitting diode technology can be applied to lightweight radar display equipment. Use of this technology requires an understanding of the diode types, light output, and current drain. Broad area silicon P-N junction diodes were operated under reverse biased conditions in the avalanche region. The light spots, or microplasms, that developed were observed and the relationship of the diode light intensity to the diode current was determined. Microplasm breakdown on the P-N junction during avalanche occurs at randomly positioned breakdown sites and the thresholds for microplasm ignition differ from site to site. The electric field required for microplasm appearance are greater than 120 kVcm. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Active and Passive Radar Detection and Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE