In(x)Ga(1-x)As 1.06-micrometer Injection Lasers.
Final rept. 15 Mar 73-14 Mar 74,
RCA LABS PRINCETON N J
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Electroluminescent junctions of InxGa1-xAs for 1.06-micrometer laser diode evaluation have been prepared by vapor-phase and liquid-phase epitaxial growth techniques. Their performance is reported. A comparison of InxGa1-xAs epitaxial layers 0 x 0.25 prepared by LPE and VPE has shown that the liquid-phase material has significantly higher dislocation densities than the vapor-grown layers. Dislocation densities, minority-carrier diffusion lengths, and electroluminescence efficiencies are discussed. The operating life of the InxGa1-xAs p-n junctions has been found to be significantly higher than that of comparably prepared GaAs junctions. The improved resistance to gradual degradation with increasing InAs content is tentatively attributed to reduced junction emission energy and to the existence of a phonon-kick degradation model. Modified author abstract
- Lasers and Masers
- Solid State Physics