Accession Number:

ADA000229

Title:

Electronic and Radiation Damage Properties of Rutile

Descriptive Note:

Final rept. 30 Jun 1970-31 Jul 1974

Corporate Author:

UTAH UNIV SALT LAKE CITY DEPT OF PHYSICS

Report Date:

1974-01-01

Pagination or Media Count:

43.0

Abstract:

A major goal has been to understand the electronic properties of rutile and to permit investigation of its feasibility as a semiconductor device material. In addition, from a more fundamental standpoint, rutile is an excellent model system for the study of wide gap semiconductors in general. The following studies are reported Impurity thermodynamics, Defect thermodynamics, Effects of internal fields on diffusion and distribution of ions, ESR measurements and miscellaneous projects, Results of crystal growth program-- Problems encountered in developing chemical vapor technique, Summary of major achievements of the crystal growth program, Plans for future research on growth of TiO2 crystal by chemical vapor transport.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE